| PART |
Description |
Maker |
| HY62LF16404C |
Super Low Power Slow SRAM - 4Mb
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
| HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb
SWITCH, REED SPST-NO 10W SMD
QSW-REED,10MM,10W,SMD
9 POS FR-4 SIP SOCKET
x8|3V|70/85/100|Low Power Slow SRAM - 256K
x8|3.3V|70/85/100|Low Power Slow SRAM - 256K
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
x8 SRAM x8的SRAM
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Analog Devices, Inc.
Panasonic Industrial Solutions
|
| HY62KF16403E |
Super Low Power Slow SRAM - 4Mb
|
Hynix Semiconductor
|
| A0A19 |
Super Low Power Slow SRAM - 8Mb
|
Hynix Semiconductor
|
| HY62SF16404E-SF HY62SF16404E-SFI HY62SF16404E-DF H |
256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM
|
Hynix Semiconductor
|
| HY62UF16806B-DFC HY62UF16806B-DFI HY62UF16806B-C H |
x16|3V|55/70/85|Super Low Power Slow SRAM - 8M x16 | 3V的| 55/70/85 |超级低功耗SRAM的速度 800
512Kx16bit full CMOS SRAM
|
GE Security, Inc.
Hynix Semiconductor
|
| HY62UF16404D |
x16|3V|55/70|Super Low Power Slow SRAM - 4M x16 | 3V的| 55/70 |超级低功耗SRAM的速度 4
|
GE Security, Inc.
|
| GM76U256CLLT |
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
| KM68FS1000Z |
128Kx8 Bit Super Low Power and Low Voltage Full CMOS SRAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128Kx8位超级低功耗和低电压的CMOS SRAM的全部（128K的8位超低功耗和低电压的CMOS静态RAM）的
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
